ntmfs4c35n.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ntmfs4c35n.pdf Principales características:

NTMFS4C35N Power MOSFET 30 V, 80 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.2 mW @ 10 V Applications 30 V 80 A 4.0 mW @ 4.5 V CPU Power Delivery DC-DC Converters D (5-8) MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V G (4) Gate-to-Source Voltage VGS 20 V Continuous Drain TA = 25 C ID 22.5 A Current RqJA TA = 80 C 16.8 S (1,2,3) (Note 1) N-CHANNEL MOSFET Power Dissipation TA = 25 C PD 2.59 W RqJA (Note 1) MARKING Continuous Drain TA = 25 C ID 36 A DIAGRAM Current RqJA 10 s TA = 80 C 27 (Note 1) D Power