nvtfs6h880n.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

nvtfs6h880n.pdf Principales características:

MOSFET - Power, Single N-Channel 80 V, 32 mW, 22 A NVTFS6H880N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H880NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 32 mW @ 10 V 22 A These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) N-Channel Parameter Symbol Value Unit D (5 - 8) Drain-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGS 20 V Continuous Drain TC = 25 C ID 21 A G (4) Current RqJC TC = 100 C 14 (Notes 1, 2, 3, 4) Steady State S (1, 2, 3) Power Dissipation TC = 25 C PD 31 W RqJC (Notes 1, 2, 3) TC = 100 C 16 MARKING DIAGRAM Continuous Drain TA = 25 C ID 6.3 A Current RqJA 1 TA = 100 C 4.6