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nvtfs6h880nl.pdf Principales características:

MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NVTFS6H880NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V 80 V 22 A These Devices are Pb-Free and are RoHS Compliant 38 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) N-Channel Parameter Symbol Value Unit D (5 - 8) Drain-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGS 20 V Continuous Drain TC = 25 C ID 22 A Current RqJC G (4) TC = 100 C 15 (Notes 1, 2, 3, 4) Steady State Power Dissipation TC = 25 C PD 33 W S (1, 2, 3) RqJC (Notes 1, 2, 3) TC = 100 C 17 Continuous Drain TA = 25 C ID 6.6 A MARKING Current RqJA DIAGRAMS TA

Keywords - ALL TRANSISTORS. Principales características

 nvtfs6h880nl.pdf Design, MOSFET, Power

 nvtfs6h880nl.pdf RoHS Compliant, Service, Triacs, Semiconductor

 nvtfs6h880nl.pdf Database, Innovation, IC, Electricity