nvtfs6h880nl.pdf datasheet:

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANVTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V80 V22 A These Devices are Pb-Free and are RoHS Compliant38 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)N-ChannelParameter Symbol Value UnitD (5 - 8)Drain-to-Source Voltage VDSS 80 VGate-to-Source Voltage VGS 20 VContinuous Drain TC = 25C ID 22 ACurrent RqJC G (4)TC = 100C 15(Notes 1, 2, 3, 4)SteadyStatePower Dissipation TC = 25C PD 33 WS (1, 2, 3)RqJC (Notes 1, 2, 3)TC = 100C 17Continuous Drain TA = 25C ID 6.6 A MARKINGCurrent RqJA DIAGRAMSTA