2n2907 2n2907a 1.pdf Principales características:
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors 1997 May 30 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2907; 2N2907A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 60 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case Switching and linear amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP switching transistor in a TO-18 metal package. 2 NPN complements 2N2222 and 2N2222A. 3 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --60 V VCEO collector-emitter voltage open base 2N2907 --40 V 2N2907A --60 V IC collector current
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2n2907 2n2907a 1.pdf Design, MOSFET, Power
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Parámetros del transistor bipolar y su interrelación.
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