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bf1101 bf1101r bf1101wr 2.pdf Principales características:

bf1101_bf1101r_bf1101wr_2bf1101_bf1101r_bf1101wr_2

DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1999 Feb 01 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to input 1 source capacitance ratio 2 drain Low noise gain controlled amplifier 3 gate 2 up to 1 GHz 2 1 4 gate 1 Partly internal self-biasing circuit to Top view MSB035 ensure good cross-modulation performance during AGC and good BF1101R marking code NCp. DC stabilization. Fig.2 Simplified outline APPLICATIONS (SOT143R). VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment. handbook, 2 columns

 

Keywords - ALL TRANSISTORS. Principales características

 bf1101 bf1101r bf1101wr 2.pdf Design, MOSFET, Power

 bf1101 bf1101r bf1101wr 2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bf1101 bf1101r bf1101wr 2.pdf Database, Innovation, IC, Electricity

 

 

 


 
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