bf1107 2.pdf Principales características:
BF1107 N-channel single gate MOSFET Rev. 04 9 January 2007 Product data sheet 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Currentless RF switch 1.3 Applications Various RF switching applications such as Passive loop through for VCR tuner Transceiver switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Lins(on) on-state insertion loss V
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bf1107 2.pdf Design, MOSFET, Power
bf1107 2.pdf RoHS Compliant, Service, Triacs, Semiconductor
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