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r07ds0466ej rjp30h1dpp.pdf Principales características:

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Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Isolated package TO-220FL Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 360 V Gate to emitter voltage VGES 30 V Collector current IC 30 A Collector peak current ic(peak) Note1 200 A Collector dissipation PC Note2 20 W Junction to case thermal impedance j-c 6.25 C/W Junction temperature Tj 150 C Storage temp

 

Keywords - ALL TRANSISTORS. Principales características

 r07ds0466ej rjp30h1dpp.pdf Design, MOSFET, Power

 r07ds0466ej rjp30h1dpp.pdf RoHS Compliant, Service, Triacs, Semiconductor

 r07ds0466ej rjp30h1dpp.pdf Database, Innovation, IC, Electricity

 

 
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