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2sd2114k 2sd2144s.pdf Principales características:

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit mm) Features 1) High DC current gain. 2SD2114K 2.9 0.2 1.1+0.2 1.9 0.2 -0.1 hFE = 1200 (Typ.) 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0 0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) +0.1 VCE (sat) = 0.18V (Typ.) 0.15-0.06 +0.1 0.4 -0.05 (IC / IB = 500mA / 20mA) All terminals have same dimensions (1) Emitter ROHM SMT3 (2) Base EIAJ SC-59 Abbreviated symbol BB (3) Collector Structure 2SD2144S Epitaxial planar type 4 0.2 2 0.2 NPN silicon transistor +0.15 0.45 -0.05 +0.4 +0.15 2.5 0.45 -0.1 0.5 -0.05 5 (1) (2) (3) ROHM SPT (1) Emitter EIAJ SC-72 (2) Collector (3) Base Denotes hFE Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Un

Keywords - ALL TRANSISTORS. Principales características

 2sd2114k 2sd2144s.pdf Design, MOSFET, Power

 2sd2114k 2sd2144s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd2114k 2sd2144s.pdf Database, Innovation, IC, Electricity