2sd2114k 2sd2144s.pdf datasheet:

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.) 0.80.10.95 0.952) High emitter-base voltage. (1) (2)00.1 VEBO =12V (Min.) 3) Low VCE (sat). (3)+0.1 VCE (sat) = 0.18V (Typ.) 0.15-0.06+0.10.4-0.05 (IC / IB = 500mA / 20mA) All terminals have same dimensions(1) Emitter ROHM : SMT3 (2) BaseEIAJ : SC-59 Abbreviated symbol: BB(3) Collector Structure 2SD2144SEpitaxial planar type 40.2 20.2NPN silicon transistor +0.150.45-0.05+0.4 +0.152.5 0.45-0.1 0.5 -0.055(1) (2) (3) ROHM : SPT (1) EmitterEIAJ : SC-72 (2) Collector(3) Base Denotes hFE Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Un