ruh60120m.pdf Principales características:
RUH60120M N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =4m (Typ.)@VGS=10V G RDS (ON) =4.5m (Typ.)@VGS=4.5V S S S Uses Ruichips Advanced RUISGTTM Technology D Low Gate Charge Minimizing Switching Loss Ultra Low On-Resistance DD Excellent QgxRDS(on) product(FOM) DD 100% Avalanche Tested PIN1 Lead Free and Green Devices (RoHS Compliant) DFN5060 D Applications UPS (Uninterrupible Power Supplies) Battery Management G Switch Systerms Motor Control and Drive S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 20 TJ Maximum Junction Temperature 150 C TSTG Storage Temperature Range -55 to 150 C IS Diode Continuous Forward Current TC=25 C 120 A Moun
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ruh60120m.pdf Design, MOSFET, Power
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