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irf614a.pdf Principales características:

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Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 10 (Max.) @ VDS = 250V Lower RDS(ON) 1.393 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 o Continuous Drain Current (TC=25 C ) 2.8 ID A o C Continuous Drain Current (TC=100 ) 1.8 1 IDM Drain Current-Pulsed A O 8.5 _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ O 49 1 IAR Avalanche Current O 2.8 A EAR Repetitive Avalanche Energy 1 O 4.0 mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns 4.8 O Total Power Dissipation (TC=25 oC) 40 W PD Linear Derating Factor W/ oC 0.32 Operating Junction

 

Keywords - ALL TRANSISTORS. Principales características

 irf614a.pdf Design, MOSFET, Power

 irf614a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf614a.pdf Database, Innovation, IC, Electricity

 

 
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