irf614a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 10 (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V250oContinuous Drain Current (TC=25 C )2.8IDAoCContinuous Drain Current (TC=100 )1.81IDM Drain Current-Pulsed AO 8.5_VGS Gate-to-Source Voltage VEAS Single Pulsed Avalanche Energy 2 mJO 491IAR Avalanche Current O 2.8 AEAR Repetitive Avalanche Energy 1O 4.0 mJ3dv/dt Peak Diode Recovery dv/dt V/ns4.8 OTotal Power Dissipation (TC=25 oC)40 WPDLinear Derating Factor W/ oC0.32Operating Junction