Todos los transistores

 

irls540a.pdf Principales características:

irls540airls540a

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.058 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.046 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25oC) 17 ID A Continuous Drain Current (TC=100oC) 12 IDM Drain Current-Pulsed 1 98 A O VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy 385 mJ O IAR Avalanche Current 1 17 A O EAR Repetitive Avalanche Energy 1 4.4 mJ O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O Total Power Dissipation (TC=25 oC) 44 W PD o Linear Derating Factor C 0.29 Opera

 

Keywords - ALL TRANSISTORS. Principales características

 irls540a.pdf Design, MOSFET, Power

 irls540a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irls540a.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.