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SW4N60V SW4N60V SAMWIN N-channel MOSFET IPAK DPAK BVDSS 600V Features ID 4.0A High ruggedness RDS(ON) 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 27nC) 2 Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced super-junction technology of SAMWIN. 3 This technology enable power MOSFET to have better characteristics, such as fast switching time, excellent avalanche characteristics, low gate charge and especially in low on resistance. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. Order Codes Item Sales Type Marking Package Packaging 1 SW I 4N60V SW4N60 IPAK TUBE 2 SW D 4N60V SW4N60 DPAK TUBE Absolute maximum ratings Symbol Parameter Value Unit VDSS Drain to

 

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 sw4n60v.pdf Design, MOSFET, Power

 sw4n60v.pdf RoHS Compliant, Service, Triacs, Semiconductor

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