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sw4n60v.pdf datasheet:

sw4n60vsw4n60v

SW4N60VSW4N60VSAMWINN-channel MOSFETIPAK DPAKBVDSS : 600VFeaturesID : 4.0A High ruggednessRDS(ON) : 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 27nC)2 Improved dv/dt Capability 1122 100% Avalanche Tested331. Gate 2. Drain 3. Source1General DescriptionThis power MOSFET is produced with advanced super-junction technology of SAMWIN.3This technology enable power MOSFET to have better characteristics, such as fastswitching time, excellent avalanche characteristics, low gate charge and especially inlow on resistance. This power MOSFET is usually used at high efficient DC to DC converterblock and switch mode power supply.Order CodesItem Sales Type Marking Package Packaging1 SW I 4N60V SW4N60 IPAK TUBE2 SW D 4N60V SW4N60 DPAK TUBEAbsolute maximum ratingsSymbol Parameter Value UnitVDSS Drain to

 

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 sw4n60v.pdf Design, MOSFET, Power

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