2sa1215.pdf Principales características:
LAPT 2SA1215 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB= 160V 100max A 0.2 24.4 2.1 VCEO 160 V IEBO VEB= 5V 100max A 0.1 2- 3.2 9 VEBO 5 V V(BR)CEO IC= 25mA 160min V IC hFE VCE= 4V, IC= 5A 50min 15 A a IB VCE(sat) IC= 5A, IB= 0.5A 2.0max V 4 A b PC fT VCE= 12V, IE=2A 50typ MHz 150(Tc=25 C) W 2 Tj COB VCB= 10V, f=1MHz 400typ pF 150 C 3 Tstg 55 +150 C -0.1 to 0.65+0.2 to to to hFE Rank O(50 100), P(70 140), Y(90 180) 1.05+0.2 -0.1 +0.3 3.0 -0.1 0.1 0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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