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2sc6144sg.pdf Principales características:

2SC6144SG Ordering number ENA1800 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6144SG High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.)) Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 10 A Collector Current (Pulse) ICP 13 A Base Current IB 2 A Collector Dissipation PC Tc=25 C, PT 1s 25 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Package Dimensions Product & Package Information unit mm (t

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