fts1001.pdf Principales características:

fts1001fts1001

Ordering number ENN6093A P-Channel Silicon MOSFET FTS1001 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2147A Mounting height 1.1mm. [FTS1001] 3.0 0.425 0.65 85 1 Drain 2 Source 3 Source 4 Gate 5 Drain 6 Source 7 Source 14 8 Drain 0.125 0.25 SANYO TSSOP8 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 4 A Drain Current (pulse) IDP PW 10 s, duty cycle 1% 20 A Allowable Power Dissipation PD Mounted on a ceramic board (1000mm2 0.8mm) 1.5 W Channel Temperature Tch 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max D

 

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