2n2913 2n2915 2n2917.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n2913 2n2915 2n2917.pdf Principales características:

2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) DUAL NPN 7.75 (0.305) 8.51 (0.335) PLANAR TRANSISTORS IN TO77 PACKAGE 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 5 (0.100) 0.74 (0.029) 3 6 1.14 (0.045) 2 1 45 0.71 (0.028) 0.86 (0.034) TO 77 PACKAGE PIN 1 Collector 1 PIN 4 Emitter 2 PIN 2 Base 1 PIN 5 Base 2 PIN 3 Emitter 1 PIN 6 Collector 2 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C unless otherwise stated) EACH SIDE TOTAL DEVICE VCBO Collector Base Voltage 45V VCEO Collector Emitter Voltage 1 45V VEBO Emitter Base Voltage 6V IC Continuous Collector Current 30 PD Total Device Dissipation TAMB = 25 C 300mW 500mW Derate above 25 C 1.72mW / C 2.86W / C PD Total Device Dissipation TC = 25 C 750mW 1.5W Derate above 25 C 4.3mW /