2n2914 2n2916 2n2918.pdf Principales características:
2N2914 2N2916 SEME 2N2918 LAB MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) DUAL NPN 7.75 (0.305) 8.51 (0.335) PLANAR TRANSISTORS IN TO77 PACKAGE 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 5 (0.100) 0.74 (0.029) 3 6 1.14 (0.045) 2 1 45 0.71 (0.028) 0.86 (0.034) TO 77 PACKAGE PIN 1 Collector 1 PIN 4 Emitter 2 PIN 2 Base 1 PIN 5 Base 2 PIN 3 Emitter 1 PIN 6 Collector 2 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C unless otherwise stated) EACH SIDE TOTAL DEVICE VCBO Collector Base Voltage 45V VCEO Collector Emitter Voltage 1 45V VEBO Emitter Base Voltage 6V IC Continuous Collector Current 30 PD Total Device Dissipation TAMB = 25 C 300mW 500mW Derate above 25 C 1.72mW / C 2.86W / C PD Total Device Dissipation TC = 25 C 750mW 1.5W Derate above 25
Keywords - ALL TRANSISTORS. Principales características
2n2914 2n2916 2n2918.pdf Design, MOSFET, Power
2n2914 2n2916 2n2918.pdf RoHS Compliant, Service, Triacs, Semiconductor
2n2914 2n2916 2n2918.pdf Database, Innovation, IC, Electricity
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