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2n6660csm4.pdf Principales características:

2n6660csm42n6660csm4

2N6660CSM4 MECHANICAL DATA N CHANNEL Dimensions in mm (inches) 1.40 0.15 5.59 0.13 (0.055 0.006) ENHANCEMENT MODE (0.22 0.005) 0.25 0.03 (0.01 0.001) MOSFET 0.23 rad. (0.009) V 60V DSS 3 2 I 1.0A D 0.23 4 1 min. (0.009) R 3.0 DS(on) 1.02 0.20 2.03 0.20 FEATURES (0.04 0.008) (0.08 0.008) Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain LCC3 PACKAGE (MO-041BA) (Underside View) DESCRIPTION PAD 1 DRAIN PAD 3 SOURCE This enhancement-mode (normally-off) vertical DMOS FET is PAD 2 N/C PAD 4 GATE ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Hi-Reliability Military and Space screening option

 

Keywords - ALL TRANSISTORS. Principales características

 2n6660csm4.pdf Design, MOSFET, Power

 2n6660csm4.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n6660csm4.pdf Database, Innovation, IC, Electricity

 

 
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