2n2907 2n2907a.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n2907 2n2907a.pdf Principales características:

2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit 60 V Collector Base Voltage -VCBO Collector Emitter Voltage 2N2907 40 -VCEO V 2N2907A 60 Emitter Base Voltage -VEBO 5 V Collector Current -IC 600 mA Power Dissipation Ptot 625 mW Junction Temperature Tj 150 Storage Temperature Range Tstg - 55 to + 150 SEMTECH ELECTRONICS LTD. Dated 12/04/2016 Re 02 2N2907 / 2N2907A Characteristics at Ta = 25 Parameter Sy