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mmbt9013g mmbt9013h.pdf Principales características:

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MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 1 V, IC = 50 mA Current Gain Group G hFE 100 250 - H hFE 160 400 - at VCE = 1 V, IC = 500 mA hFE 40 - - Collector Base Cutoff Current ICBO - 100 nA at VCB = 35 V Emitter Base Cutoff Current IEBO - 100 nA at VEB = 5 V Collector Bae Breakdown Voltage V(BR)CBO 40

 

Keywords - ALL TRANSISTORS. Principales características

 mmbt9013g mmbt9013h.pdf Design, MOSFET, Power

 mmbt9013g mmbt9013h.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmbt9013g mmbt9013h.pdf Database, Innovation, IC, Electricity

 

 
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