mmbt9013g mmbt9013h.pdf datasheet:

MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 500 mAPower Dissipation Ptot 200 mWO Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C OCharacteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 1 V, IC = 50 mA Current Gain Group G hFE 100 250 - H hFE 160 400 - at VCE = 1 V, IC = 500 mA hFE 40 - - Collector Base Cutoff Current ICBO - 100 nA at VCB = 35 V Emitter Base Cutoff Current IEBO - 100 nA at VEB = 5 V Collector Bae Breakdown Voltage V(BR)CBO 40