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wvm15n60.pdf Principales características:

wvm15n60

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N60 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power source contravariance. 4. Quality Class GS, G. TECHNICAL DATA (Ta = 25 C ) Parameter name Symbols Unit Specifications Test Condition Drain-Source Voltage VDSS V 600(max.) Drain Current ID A 15(max.) Total Power Dissipation PD W 230(max.) (Tc=25 C) Gate-Source Voltage VGSS V +20(max.) Junction Temperature Tjm C 150 Storage Temperature Tstg C -55 +150 Drain-Source Breakdown Voltage VGS=0V, ID=1mA V(BR)OSS V Min. 600 Static Drain-Source On-Resistance VGS=10V, ID=7.5

 

Keywords - ALL TRANSISTORS. Principales características

 wvm15n60.pdf Design, MOSFET, Power

 wvm15n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 wvm15n60.pdf Database, Innovation, IC, Electricity

 

 

 


 
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