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smbt3906 s2a sot363.pdf Principales características:

SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 Low collector-emitter saturation voltage 6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type SMBT 3904S (NPN) 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package SMBT 3906S s2A Q62702-A1202 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage 40 V VCEO Collector-base voltage 40 VCBO Emitter-base voltage 6 VEBO DC collector current 200 mA IC 250 mW Total power dissipation, TS = 115 C Ptot Junction temperature 150 C Tj Storage temperature - 65...+150 Tstg Thermal Resistance 1) Junction ambient K/W RthJA 275 Junction - soldering point RthJS 140 2 Cu 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Semicondu

Keywords - ALL TRANSISTORS. Principales características

 smbt3906 s2a sot363.pdf Design, MOSFET, Power

 smbt3906 s2a sot363.pdf RoHS Compliant, Service, Triacs, Semiconductor

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