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ssm4435m.pdf Principales características:

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SSM4435M P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BVDSS -30V D D Low on-resistance D R 20m DS(ON) D Fast switching ID -8A G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage - 30 V VGS Gate-Source Voltage 20 V I =25 C Continuous Drain Current3 -8 A D @ TA I =70 C Continuous Drain Current3 -6 A D @ TA I Pulsed Drain Current1,2 -50 A DM PD @ TA=25 C Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ C TSTG Storage Temp

 

Keywords - ALL TRANSISTORS. Principales características

 ssm4435m.pdf Design, MOSFET, Power

 ssm4435m.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ssm4435m.pdf Database, Innovation, IC, Electricity

 

 
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