Todos los transistores

2sc4226-r24 2sc4226-r25 2sc4226-r26.pdf Principales características:

2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3 V Collector Current -Continuous IC 100 mA Collector Dissipation PC 150 mW Junction and Storage Temperature Tj,Tstg -65 to +150 www.slkormicro.com 1 2SC4226 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100 A,IE=0 20 V Collector-emitter breakdown V(BR)CEO IC=1mA,IB=0 12 V voltage Emitter-base breakdown voltage V(BR)EBO IE=100 A,IC=0 3 V Collector cut-off

Keywords - ALL TRANSISTORS. Principales características

 2sc4226-r24 2sc4226-r25 2sc4226-r26.pdf Design, MOSFET, Power

 2sc4226-r24 2sc4226-r25 2sc4226-r26.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc4226-r24 2sc4226-r25 2sc4226-r26.pdf Database, Innovation, IC, Electricity