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mmbta56l mmbta56h mmbta56g.pdf Principales características:

MMBTA56 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary Type NPN Transistor MMBTA06 General Purpose Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -4 V Collector Current IC -500 mA Collector Power Dissipation PC 225 mW Thermal Resistance From Junction To Ambient R JA 555 /W Junction Temperature Tj 150 Storage Temperature Tstg -55 +150 www.slkormicro.com 1 MMBTA56 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100 A, IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=

Keywords - ALL TRANSISTORS. Principales características

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