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ss8050w.pdf Principales características:

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SS8050W NPN Transistors Features 3 High Collector Current Complementary to SS8550W 2 1.Base 2.Emitter 3.Collector 1 Simplified outline(SOT-323) Absolute Maximum Ratings Ta = 25 Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissipation 250 mW R JA Thermal Resistance From Junction To Ambient 500 /W Tj Junction Temperature 150 Tstg Storage Temperature -55 +150 Electrical Characteristics Ta = 25 Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100 A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100 A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 A Coll

 

Keywords - ALL TRANSISTORS. Principales características

 ss8050w.pdf Design, MOSFET, Power

 ss8050w.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050w.pdf Database, Innovation, IC, Electricity

 

 
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