ss8050w.pdf datasheet:

SS8050WNPN Transistors Features3 High Collector Current Complementary to SS8550W21.Base2.Emitter3.Collector1 Simplified outline(SOT-323) Absolute Maximum Ratings Ta = 25Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 APC Collector Power Dissipation 250 mW RJA Thermal Resistance From Junction To Ambient 500 /W Tj Junction Temperature 150 Tstg Storage Temperature -55+150 Electrical Characteristics Ta = 25 Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 VCollector cut-off current ICBO VCB=40V, IE=0 0.1 A Coll