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STF24N60DM2 N-channel 600 V, 0.175 typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features VDS @ RDS(on) Order code ID TJmax max STF24N60DM2 650 V 0.20 18 A Fast-recovery body diode Extremely low gate charge and input 3 2 1 capacitance TO-220FP Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Figure 1. Internal schematic diagram Applications D(2) Switching applications Description G(1) This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. S(3) AM01476v1 Table 1. Device summary

 

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 stf24n60dm2.pdf Design, MOSFET, Power

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