2n6660.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n6660.pdf Principales características:

Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and Low power drive requirement Supertex s well-proven silicon-gate manufacturing process. Ease of paralleling This combination produces a device with the power handling Low CISS and fast switching speeds capabilities of bipolar transistors, and the high input Excellent thermal stability impedance and positive temperature coefficient inherent Integral source-drain diode in MOS devices. Characteristic of all MOS structures, this High input impedance and high gain device is free from thermal runaway and thermally-induced Hi-Rel processing available secondary breakdown. Applications Supertex