2sa1213.pdf Principales características:
2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A PW-MINI Base current IB -0.4 A JEDEC PC 500 Collector power dissipation mW JEITA SC-62 PC 1000 (Note 1) TOSHIBA 2-5K1A Junction temperature Tj 150 C Weight 0.05 g (typ.) Storage temperature range Tstg -55 to 150 C Note 1 Mounted on ceramic substrate (250 mm2 0.8 t) 1 2
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