2sa1213.pdf datasheet:

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -2 APW-MINI Base current IB -0.4 AJEDEC PC 500 Collector power dissipation mW JEITA SC-62PC 1000 (Note 1) TOSHIBA 2-5K1AJunction temperature Tj 150 CWeight: 0.05 g (typ.) Storage temperature range Tstg -55 to 150 C Note 1: Mounted on ceramic substrate (250 mm2 0.8 t) 1 2