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2sc6100.pdf Principales características:

2SC6100 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6100 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 400 to 1000 (IC = 0.3 A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) 3 2 High-speed switching tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V 1 Base Collector-emitter voltage VCEX 80 V 2 Emitter Collector-emitter voltage VCEO 50 V 3 Collector Emitter-base voltage VEBO 5 V UFM DC IC 2.5 Collector current A JEDEC Pulse ICP 4.0 JEITA Base current IB 250 mA TOSHIBA 2-2U1A PC (Note 1) 800 Collector power dissipation mW Weight 6.6 mg (typ.) PC (Note 2) 500 Junction temperature Tj 150 C Storage temperature rang

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 2sc6100.pdf Design, MOSFET, Power

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