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2SC6100 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6100 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) 32 High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 100 V1 :Base Collector-emitter voltage VCEX 80 V2 :Emitter Collector-emitter voltage VCEO 50 V3 :Collector Emitter-base voltage VEBO 5 V UFM DC IC 2.5Collector current A JEDEC Pulse ICP 4.0JEITA Base current IB 250 mATOSHIBA 2-2U1APC (Note 1) 800 Collector power dissipation mW Weight: 6.6 mg (typ.) PC (Note 2) 500 Junction temperature Tj 150 CStorage temperature rang