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2sc6105.pdf Principales características:

2sc61052sc6105

2SC6105 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC6105 High Voltage Switching Applications Unit mm High voltage VCEO = 600 V (max) Low saturation voltage VCE (sat) (1) = 1.0 V (max) @IC = 20 mA, IB = 0.5 mA Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 600 V Emitter-base voltage VEBO 7 V DC IC 50 Collector current mA PULSE ICP 100 Base current IB 25 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 C JEDEC TO-236MOD Storage temperature range Tstg -55 to 150 C JEITA SC-59 TOSHIBA 2-3F1A Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight 12 mg (typ.) temperature, etc.) may cause this product to decrease in the

 

Keywords - ALL TRANSISTORS. Principales características

 2sc6105.pdf Design, MOSFET, Power

 2sc6105.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc6105.pdf Database, Innovation, IC, Electricity

 

 
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