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2SC6105 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC6105 High Voltage Switching Applications Unit: mm High voltage: VCEO = 600 V (max) Low saturation voltage: VCE (sat) (1) = 1.0 V (max) @IC = 20 mA, IB = 0.5 mA Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltage VCEO 600 VEmitter-base voltage VEBO 7 VDC IC 50Collector current mA PULSE ICP 100Base current IB 25 mACollector power dissipation PC 200 mWJunction temperature Tj 150 CJEDEC TO-236MODStorage temperature range Tstg -55 to 150 C JEITA SC-59TOSHIBA 2-3F1ANote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 12 mg (typ.) temperature, etc.) may cause this product to decrease in the