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2sc6125.pdf Principales características:

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit mm Power Amplifier Applications High DC current gain hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current DC IC 4 A (Note 1) Pulse ICP 7 JEDEC Base current IB 0.4 A JEITA SC-62 DC PC 1 Collector power dissipation W TOSHIBA 2-5K1A (Note 2) PC 2.5 t = 10 s Weight 0.05 g (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Note 1 Ensure that the channel temperature does not exceed 150 C during use of the device. Note 2 Mounted o

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 2sc6125.pdf Design, MOSFET, Power

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