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2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit : mmPower Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 40 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 6 VCollector current DC IC 4A (Note 1) Pulse ICP 7JEDEC Base current IB 0.4 AJEITA SC-62DC PC 1Collector power dissipation W TOSHIBA 2-5K1A(Note 2) PC 2.5t = 10 s Weight: 0.05 g (typ.) Junction temperature Tj 150 CStorage temperature range Tstg -55 to 150 C Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: Mounted o