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2sc6126.pdf Principales características:

2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit mm DC-DC Converter Applications LCD Backlighting Applications High DC current gain hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation VCE(sat) = 0.18 V (max) High-speed switching tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 V VCEX 120 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V JEDEC DC IC 3 Collector current (Note1) A JEITA SC-62 Pulse ICP 5 TOSHIBA 2-5K1A Base current IB 1.5 A Collector power DC PC 1.0 Weight 0.05 g (typ.) W (Note2) dissipation 2.5 t = 10 s Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Note 1 Please use devices on condition that the junction temperature

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