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2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit : mmDC-DC Converter Applications LCD Backlighting Applications High DC current gain: hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation: VCE(sat) = 0.18 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 VVCEX 120 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 6 VJEDEC DC IC 3Collector current (Note1) A JEITA SC-62Pulse ICP 5TOSHIBA 2-5K1ABase current IB 1.5 ACollector power DC PC 1.0 Weight: 0.05 g (typ.) W (Note2) dissipation 2.5 t = 10 s Junction temperature Tj 150 CStorage temperature range Tstg -55 to 150 C Note 1: Please use devices on condition that the junction temperature