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2sk3561.pdf Principales características:

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3561 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Yfs = 6.5S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k ) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 8 Drain current A Pulse (t = 1 ms) IDP 32 (Note 1) 1 Gate 2 Drain Drain power dissipation (Tc = 25 C) PD 40 W 3 Source Single pulse avalanche energy EAS 312 mJ (Note 2) Avalanche current IAR 8 A JEDEC Repetitive avalanche energy (Note 3) EAR 4 mJ JEITA SC-67 Channel temperature Tch 15

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