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tgpf15n60fdr.pdf Principales características:

tgpf15n60fdrtgpf15n60fdr

TGPF15N60FDR Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s 175 Operating Temperature RoHS Compliant JEDEC Qualification Applications Motor Drive, Air Conditioner, Inverter, Solar Device Package Marking Remark TGPF15N60FDR TO-220F TGPF15N60FDR RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES 20 V TC = 25 30 A Continuous Collector Current IC TC = 100 15 A Pulsed Collector Current (Note 1) ICM 45 A Diode Continuous Forward Current TC = 100 IF 15 A Diode Pulsed Forward Current (Note 1) IFM 100 A TC = 25 44 W Power Dissipation PD TC = 100 22 W Operating Junction Temperatur

 

Keywords - ALL TRANSISTORS. Principales características

 tgpf15n60fdr.pdf Design, MOSFET, Power

 tgpf15n60fdr.pdf RoHS Compliant, Service, Triacs, Semiconductor

 tgpf15n60fdr.pdf Database, Innovation, IC, Electricity

 

 
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