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tmp10n60 tmpf10n60.pdf Principales características:

TMP10N60/TMPF10N60 TMP10N60G/TMPF10N60G VDSS = 660 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 0.75 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHS TMP10N60G / TMPF10N60G TO-220 / TO-220F TMP10N60G / TMPF10N60G Halogen Free Absolute Maximum Ratings Parameter Symbol TMP10N60(G) TMPF10N60(G) Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 25 10 10* A Continuous Drain Current ID TC = 100 6.5 6.5* A Pulsed Drain Current (Note 1) IDM 40 40* A Single Pulse Avalanche Energy (Note 2) EAS 758 mJ Repetitive Avalanche Current (Note 1) IAR 10 A Repetitive Avalanche Energy (Note 1) EAR 19.8 mJ TC = 25 198 52 W Power Dissipati

Keywords - ALL TRANSISTORS. Principales características

 tmp10n60 tmpf10n60.pdf Design, MOSFET, Power

 tmp10n60 tmpf10n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 tmp10n60 tmpf10n60.pdf Database, Innovation, IC, Electricity