tsp4n60m tsf4n60m.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

tsp4n60m tsf4n60m.pdf Principales características:

TSP4N60M/TSF4N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstand high energy pulse in the Fast switching avalanche and commutation mode. These devices are well 100% avalanche tested suited for high efficiency switched mode power supplies, active power factor correction based on half bridge Improved dv/dt capability topology. Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter TSP4N60M TSF4N60M Units VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V TC = 25 4.0 4.0* A ID Drain Curr