p1503bvg.pdf datasheet:

P1503BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 15m @VGS = 10V 10A SOP- 08 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 10 ID Continuous Drain Current TA = 70 C 8 A IDM 40 Pulsed Drain Current1 IAS Avalanche Current 10 EAS Avalanche Energy L = 0.1mH 5 mJ TA = 25 C 2.5 PD Power Dissipation W TA = 70 C 1.6 TJ, TSTG Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Lead RqJL 20 C / W Junction-to-Ambient RqJA 50 1 Pulse width limited by maximum junction temperature. 2 Duty cycle 1% Ver 1.0 1 2012/4/13 P1503BVG N-Channel Enhancemen