p1503bvg.pdf datasheet:

P1503BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 15m @VGS = 10V 10ASOP- 08100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C10IDContinuous Drain CurrentTA = 70 C8AIDM40Pulsed Drain Current1IASAvalanche Current 10EASAvalanche Energy L = 0.1mH 5 mJTA = 25 C2.5PDPower Dissipation WTA = 70 C1.6TJ, TSTGJunction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Lead RqJL 20C / WJunction-to-Ambient RqJA 501Pulse width limited by maximum junction temperature.2Duty cycle 1%Ver 1.0 1 2012/4/13P1503BVGN-Channel Enhancemen